Semiconductor Nanowires

III-V semiconductor nanowires (NW) are especially suited for use in nanoelectronic applications thanks to well-established techniques to integrate them in nanodevices. NWs offer enormous possibilities for axial and radial heterostructure design which are unattainable in bulk and thin films and allows for band-gab tunability. While working at Lund University I have explored some of them experimentally [Thin Solid Films 515 793 (2006)] and theoretically [Phys Rev B 75, 245121 (2007)].  I have also shown that by decreasing the radial dimension of the NWs down to 25 nm quantum confinement features are visible in the emission spectrum [J. Phys.: Condens. Matter 19, 295219 (2007)]. These kind of findings are currently exploited to grow advanced III-V heterostructures.

I am the first-principle expert in an on-going collaboration with Prof. J. Johansson (Lund University) aiming at the understanding and control of the NW growth process. I have developed a novel first principles method to model the polar interface between InAs and GaAs. This result was crucial to explain theoretically the optimal growth mode of straight InAs-on-GaAs NW heterostructures [Nano Lett. 11(9) 3899–3905 (2011)].



Ball and stick model of the GaAs zincblende/InAs wurtzite interface [M. E. Messing et al. Nano Letters, 11 (9), 3899–3905 (2011)


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