III-V semiconductor nanowires (NW) are especially suited for use in nanoelectronic applications thanks to well-established techniques to integrate them in nanodevices. NWs offer enormous possibilities for axial and radial heterostructure design which are unattainable in bulk and thin films and allows for band-gab tunability. While working at Lund University I have explored some of them experimentally [Thin Solid Films 515 793 (2006)] and theoretically [Phys Rev B 75, 245121 (2007)]. I have also shown that by decreasing the radial dimension of the NWs down to 25 nm quantum confinement features are visible in the emission spectrum [J. Phys.: Condens. Matter 19, 295219 (2007)]. These kind of findings are currently exploited to grow advanced III-V heterostructures.
I am the first-principle expert in an on-going collaboration with Prof. J. Johansson (Lund University) aiming at the understanding and control of the NW growth process. I have developed a novel first principles method to model the polar interface between InAs and GaAs. This result was crucial to explain theoretically the optimal growth mode of straight InAs-on-GaAs NW heterostructures [Nano Lett. 11(9) 3899–3905 (2011)].
- J. Johansson, Z. Zanolli, K. A. Dick, Polytype attainability in III-V semiconductor nanowires,
Crystal Growth & Design, DOI: 10.1021/acs.cgd.5b01339 (2015)
- M. Ghasemi, Z. Zanolli, M. Stankovski, J. Johansson, Size- and shape-dependent phase diagram of In-Sb nano-alloys,
Nanoscale 7, 17387-17396 (2015)