Nanowires growth and ab initio modelling together in NanoLetters

Ever wondered how to grow straight InAs-on-GaAs NanoWires?
If curious, check this paper out:
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
It is the result of the collaboration between Lund University (Sweden), University of Canberra (Australia) and me (University of Liege, Belgium) for the ab initio part.
Just published on Nano Letters!

M. E. Messing et al., Growth of Straight InAs-on-GaAs Nanowire Heterostructures,
Nano Letters 2011, DOI: 10.1021/nl202051w

 

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This entry was posted in III-V nanowires, nanoscience, publication, Zeila and tagged , , . Bookmark the permalink.

2 Responses to Nanowires growth and ab initio modelling together in NanoLetters

  1. myrta says:

    well done! 🙂

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